𝔖 Bobbio Scriptorium

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[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - A 0.1-μm self-aligned-gate GaAs MESFET with multilayer interconnection structure for ultra-high-speed ICs

✍ Scribed by Tokumitsu, M.; Hirano, M.; Otsuji, T.; Yamaguchi, S.; Yamasaki, K.

Book ID: 120185841
Publisher: IEEE
Year: 1996
Weight: 429 KB
Category: Article
ISBN-13: 9780780333932
DOI: 10.1109/IEDM.1996.553570

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