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[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - A shallow trench isolation for sub-0.13 μm CMOS technologies

✍ Scribed by Nandakumar, M.; Sridhar, S.; Nag, S.; Mei, P.; Rogers, D.; Hanratty, M.; Amerasekera, A.; Chen, I.-C.

No coin nor oath required. For personal study only.

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