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[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - A trench lateral power MOSFET using self-aligned trench bottom contact holes

✍ Scribed by Fujishima, N.; Salama, C.A.T.

Book ID: 115527052
Publisher: IEEE
Year: 1997
Weight: 483 KB
Volume: 0
Category: Article
ISBN-13: 9780780341005
DOI: 10.1109/iedm.1997.650399

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