𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - A novel 6T-SRAM cell technology designed with rectangular patterns scalable beyond 0.18 μm generation and desirable for ultra high speed operation

✍ Scribed by Ishida, M.; Kawakami, T.; Tsuji, A.; Kawamoto, N.; Motoyoshi, M.; Ouchi, N.

Book ID: 118172162
Publisher: IEEE
Year: 1998
Weight: 706 KB
Volume: 0
Category: Article
ISBN-13: 9780780347748
DOI: 10.1109/iedm.1998.746322

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE International Electron Devices Mee

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Novel high-Q bondwire inductor for MMIC

✍ Yong-Goo Lee, ; Sang-Ki Yun, ; Hai-Young Lee, 📂 Article 📅 1998 🏛 IEEE ⚖ 609 KB

[IEEE International Electron Devices Mee

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Explanation and quantitative model for the matching behaviour of poly-silicon resistors

✍ Thewes, R.; Brederlow, R.; Dahl, C.; Kollmer, U.; Linnenbank, C.G.; Holzapfl, B. 📂 Article 📅 1998 🏛 IEEE ⚖ 530 KB

[IEEE International Electron Devices Mee

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model

✍ MeiKei Ieong, ; Solomon, P.M.; Laux, S.E.; Wong, H.-S.P.; Chidambarrao, D. 📂 Article 📅 1998 🏛 IEEE ⚖ 304 KB

[IEEE International Electron Devices Mee

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - A calibrated model for trapping of implanted dopants at material interface during thermal annealing

✍ Yong-Seog Oh, ; Ward, D.E. 📂 Article 📅 1998 🏛 IEEE ⚖ 329 KB