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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Advanced MOSFETs using HfTaON/SiO/sub 2/ gate dielectric and TaN metal gate with excellent performances for low standby power application

✍ Scribed by Xiongfei Yu, ; Chunxiang Zhu, ; Mingbin Yu, ; Li, M.F.; Chin, A.; Tung, C.H.; Gui, D.; Dim-Lee Kwong,

Book ID: 126731352
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 436 KB
Category: Article
ISBN-13: 9780780392687
DOI: 10.1109/IEDM.2005.1609257

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