[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Long retention and low voltage operation using IrO/sub 2/HfAlO/HfSiO/HfalO gate stack for memory application

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