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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Improvement in high-k (HfO/sub 2//SiO/sub 2/) reliability by incorporation of fluorine

✍ Scribed by Kang-ill Seo, ; Sreenivasan, R.; McIntyre, P.C.; Saraswat, K.C.

Book ID: 121283679
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 778 KB
Category: Article
ISBN-13: 9780780392687
DOI: 10.1109/IEDM.2005.1609367

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