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[IEEE IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits - Cambridge, UK (14-17 April 2003)] ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. - 200V multi RESURF trench MOSFET (MR-TMOS)

✍ Scribed by Kurosaki, T.; Shishido, H.; Kitada, M.; Oshima, K.; Kunori, S.; Sugai, A.

Book ID: 125514671
Publisher: IEEE
Year: 2003
Weight: 336 KB
Edition: 2003
Category: Article
ISBN-13: 9780780378766
DOI: 10.1109/ISPSD.2003.1225266

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