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[IEEE IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits - Cambridge, UK (14-17 April 2003)] ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. - 30V new fine trench MOSFET with ultra low on-resistance

✍ Scribed by Ono, S.; Kawaguchi, Y.; Nakagawa, A.

Book ID: 124097024
Publisher: IEEE
Year: 2003
Weight: 241 KB
Edition: 2003
Category: Article
ISBN-13: 9780780378766
DOI: 10.1109/ISPSD.2003.1225223

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