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[IEEE IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits - Cambridge, UK (14-17 April 2003)] ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. - A new power W-gated trench MOSFET (WMOSFET) with high switching performance

✍ Scribed by Darwish, M.; Yue, C.; Kam Hong Lui, ; Giles, F.; Chan, B.; Kuo-in Chen, ; Pattanayak, D.; Qufei Chen, ; Terrill, K.; Owyang, K.

Book ID: 111879180
Publisher: IEEE
Year: 2003
Weight: 373 KB
Edition: 2003
Volume: 0
Category: Article
ISBN-13: 9780780378766
DOI: 10.1109/ispsd.2003.1225222

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