✦ LIBER ✦

[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON

✍ Scribed by Mitani, Y.; Nagamine, M.; Satake, H.; Toriumi, A.

No coin nor oath required. For personal study only.

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