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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Electrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

✍ Scribed by Guarini, K.W.; Topol, A.W.; Ieong, M.; Yu, R.; Shi, L.; Newport, M.R.; Frank, D.J.; Singh, D.V.; Cohen, G.M.; Nitta, S.V.; Boyd, D.C.; O'Neil, P.A.; Tempest, S.L.; Pogge, H.B.; Purushothaman, S.; Haensch, W.E.

Book ID: 121184127
Publisher: IEEE
Year: 2002
Weight: 299 KB
Category: Article
ISBN-13: 9780780374621
DOI: 10.1109/IEDM.2002.1175992

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