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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - RF performance vulnerability to hot carrier stress and consequent breakdown in low power 90 nm RFCMOS

✍ Scribed by Pantisano, L.; Schreurs, D.; Kaczer, B.; Jeamsaksiri, W.; Venegas, R.; Degraeve, R.; Cheung, K.P.; Groeseneken, G.

Book ID: 126635446
Publisher: IEEE
Year: 2003
Weight: 272 KB
Edition: 1
Category: Article
ISBN-13: 9780780378728
DOI: 10.1109/IEDM.2003.1269208

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