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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation

✍ Scribed by Chin, A.; Chan, K.T.; Huang, C.H.; Chen, C.; Liang, V.; Chen, J.K.; Chien, S.C.; Sun, S.W.; Duh, D.S.; Lin, W.J.; Chunxiang Zhu, ; Li, M.F.; McAlister, S.P.; Dim-Lee Kwong,

Book ID: 120829690
Publisher: IEEE
Year: 2003
Weight: 281 KB
Edition: 1
Category: Article
ISBN-13: 9780780378728
DOI: 10.1109/IEDM.2003.1269302

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