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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Record efficiency and gain at 2.1 GHz of high power RF transistors for cellular and 3G base stations

โœ Scribed by Brech, H.; Brakensiek, W.; Burdeaux, D.; Burger, W.; Dragon, C.; Formicone, G.; Pryor, B.; Rice, D.


Book ID
124085475
Publisher
IEEE
Year
2003
Weight
316 KB
Edition
1
Category
Article
ISBN-13
9780780378728

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