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[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer

✍ Scribed by Hilt, O.; Brunner, F.; Cho, E.; Knauer, A.; Bahat-Treidel, E.; Wurfl, J.

No coin nor oath required. For personal study only.

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