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[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - Effect of oxygen annealing temperature on AlGaN/GaN HEMTs

✍ Scribed by Seok, Ogyun; Kim, Young-Shil; Lim, Jiyong; Han, Min-Koo

No coin nor oath required. For personal study only.

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