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[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - GaN based Super HFETs over 700V using the polarization junction concept

✍ Scribed by Nakajima, Akira; Dhyani, Mahesh H.; Narayanan, E. M. Sankara; Sumida, Yasunobu; Kawai, Hiroji

No coin nor oath required. For personal study only.

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