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[IEEE Extended Abstracts of the Fourth International Workshop on Junction Technology - Shanghai, China (15-16 March 2004)] The Fourth International Workshop on Junction Technology, 2004. IWJT '04. - A novel SiGe/Si hetero-junction power diode utilizing an ideal ohmic contact

✍ Scribed by Ma Li, ; Gao Yong,

Book ID: 120162548
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 231 KB
Category: Article
ISBN-13: 9780780381919
DOI: 10.1109/IWJT.2004.1306851

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