[IEEE 4th International Conference on Solid-State and IC Technology - Beijing, China (24-28 Oct. 1995)] Proceedings of 4th International Conference on Solid-State and IC Technology - Accurate simulation on band-to-band tunneling induced leakage current using a global non-local model

✍ Scribed by Peng, J.Z.; Haddad, S.; Hsu, J.; Jian Chen, ; Longcor, S.; Chi Chang,

• Book ID: 121706901
• Publisher: IEEE
• Year: 1995
• Weight: 253 KB
• Category: Article
• DOI: 10.1109/icsict.1995.499654