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[IEEE 4th International Conference on Solid-State and IC Technology - Beijing, China (24-28 Oct. 1995)] Proceedings of 4th International Conference on Solid-State and IC Technology - Trade-offs between SiGe and GaAs bipolar ICs

✍ Scribed by Ning, T.H.

Book ID: 120659309
Publisher: IEEE
Year: 1995
Weight: 339 KB
Category: Article
DOI: 10.1109/ICSICT.1995.500188

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