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[IEEE 32nd European Solid-State Device Research Conference - Firenze, Italy (2002.9.24-2002.9.26)] 32nd European Solid-State Device Research Conference - Effects of Boron and Germanium Base Profiles on SiGe and SiGe:C BJT Characteristics

✍ Scribed by Sadovnikov, A.; Printy, C.; Budri, T.; Loo, R.; Meunier-Beillard, P.; El-Diwany, M.

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