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[IEEE 2014 IEEE International Solid- State Circuits Conference (ISSCC) - San Francisco, CA, USA (2014.02.9-2014.02.13)] 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) - 13.3 20nm High-density single-port and dual-port SRAMs with wordline-voltage-adjustment system for read/write assists

✍ Scribed by Yabuuchi, Makoto; Tsukamoto, Yasumasa; Morimoto, Masao; Tanaka, Miki; Nii, Koji

Book ID: 125807622
Publisher: IEEE
Year: 2014
Weight: 923 KB
Category: Article
ISBN: 1479909181
DOI: 10.1109/ISSCC.2014.6757414

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