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[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Origin and implications of hot carrier degradation of Gate-all-around nanowire III–V MOSFETs

✍ Scribed by Shin, SangHoon; Wahab, Muhammad A.; Masuduzzaman, Muhammad; Si, Mengwei; Gu, Jiangjiang; Ye, P. D.; Alam, Muhammad A.

Book ID: 126724744
Publisher: IEEE
Year: 2014
Weight: 362 KB
Category: Article
ISBN: 1479933171
DOI: 10.1109/IRPS.2014.6860641

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