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[IEEE 2014 IEEE International Conference on IC Design & Technology (ICICDT) - Austin, TX, USA (2014.5.28-2014.5.30)] 2014 IEEE International Conference on IC Design & Technology - Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs

✍ Scribed by Kamei, Masayuki; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

Book ID: 126662202
Publisher: IEEE
Year: 2014
Weight: 699 KB
Category: Article
ISBN: 147992153X
DOI: 10.1109/ICICDT.2014.6838598

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