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[IEEE 2013 IEEE International Nanoelectronics Conference (INEC) - Singapore, Singapore (2013.01.2-2013.01.4)] 2013 IEEE 5th International Nanoelectronics Conference (INEC) - The side effects and the effects of thickness of source/drain fin on P-Type FinFET devices

✍ Scribed by Yang, Hsin-Chia; Peng, Wei-Yen; Liao, Wen-Shiang; Wu, Guo-Wei; Tsai, Cheng-Yu; Wang, Mu-Chun; Chi, Sung-Ching; Wang, Shea-Jue

Book ID: 121399325
Publisher: IEEE
Year: 2013
Weight: 649 KB
Category: Article
ISBN: 1467348414
DOI: 10.1109/INEC.2013.6466012

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