[IEEE 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2012.04.23-2012.04.25)] Proceedings of Technical Program of 2012 VLSI Technology, System and Application - PMOSFET layout dependency with embedded SiGe Source/Drain at POLY and STI edge in 32/28nm CMOS technology

✍ Scribed by Song, L.; Liang, Y.; Onoda, H.; Lai, C. W.; Wallner, T. A.; Pofelski, A.; Gruensfelder, C.; Josse, E.; Okawa, T.; Brown, J.; Williams, R. Q.; Holt, J.; Weijtmans, J. W.; Greene, B.; Utomo, H. K.; Lee, S. C.; Nair, D.; Zhang, Q.; Zhu, C.; Wu, X.; Sherony, M.; Lee, Y. M.; Henson, W. K.; Divakaruni, R.; Kaste, E.

• Book ID: 120068422
• Publisher: IEEE
• Year: 2012
• Weight: 372 KB
• Category: Article
• ISBN: 1457720825
• DOI: 10.1109/VLSI-TSA.2012.6210152