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[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Integration of III-V on Si for High-Mobility CMOS

✍ Scribed by Waldron, Niamh; Wang, Gang; Nguyen, Ngoc Duy; Orzali, Tommaso; Merckling, Clement; Brammertz, Guy; Ong, Patrick; Winderickx, Gillis; Hellings, Geert; Eneman, Geert; Caymax, Matty; Meuris, Marc; Horiguchi, Naoto; Thean, Aaron

Book ID: 120888726
Publisher: IEEE
Year: 2012
Weight: 950 KB
Category: Article
ISBN: 1457718634
DOI: 10.1109/ISTDM.2012.6222422

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