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[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - 200-mm CVD Grown Si/SiGe Resonant Interband Tunnel Diodes Optimized for High Peak-to-Valley Current Ratios

✍ Scribed by Ramesh, Anisha; Berger, Paul R.; Douhard, Bastien; Vandervorst, Wilfried; Loo, Roger

Book ID: 120066937
Publisher: IEEE
Year: 2012
Weight: 225 KB
Category: Article
ISBN: 1457718634
DOI: 10.1109/ISTDM.2012.6222481

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