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[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - Conductive filament scaling of TaOx bipolar ReRAM for long retention with low current operation

✍ Scribed by Ninomiya, T.; Takagi, T.; Wei, Z.; Muraoka, S.; Yasuhara, R.; Katayama, K.; Ikeda, Y.; Kawai, K.; Kato, Y.; Kawashima, Y.; Ito, S.; Mikawa, T.; Shimakawa, K.; Aono, K.

Book ID: 126150399
Publisher: IEEE
Year: 2012
Weight: 698 KB
Category: Article
ISBN: 1467308455
DOI: 10.1109/VLSIT.2012.6242467

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