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[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - Strained tunnel FETs with record ION: first demonstration of ETSOI TFETs with SiGe channel and RSD

✍ Scribed by Villalon, A.; Le Royer, C.; Casse, M.; Cooper, D.; Previtali, B.; Tabone, C.; Hartmann, J.-M.; Perreau, P.; Rivallin, P.; Damlencourt, J.-F.; Allain, F.; Andrieu, F.; Weber, O.; Faynot, O.; Poiroux, T.

Book ID: 118144229
Publisher: IEEE
Year: 2012
Weight: 387 KB
Category: Article
ISBN: 1467308455
DOI: 10.1109/vlsit.2012.6242455

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