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[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Process variation compensation with effective gate-width tuning for low-voltage CMOS digital circuits

✍ Scribed by Kishiwada, Yasushi; Ueda, Shun; Miyawaki, Yusuke; Matusoka, Toshimasa

Book ID: 125843452
Publisher: IEEE
Year: 2012
Weight: 374 KB
Category: Article
ISBN: 1467308374
DOI: 10.1109/IMFEDK.2012.6218634

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