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[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

✍ Scribed by Ryu, Sei-Hyung; Capell, Craig; Jonas, Charlotte; Cheng, Lin; O'Loughlin, Michael; Burk, Al; Agarwal, Anant; Palmour, John; Hefner, Allen

Book ID: 124091868
Publisher: IEEE
Year: 2012
Weight: 850 KB
Category: Article
ISBN: 1457715961
DOI: 10.1109/ISPSD.2012.6229072

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