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[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Determination of optimum structure of 4H-SiC Trench MOSFET

✍ Scribed by Harada, Shinsuke; Kato, Makoto; Kojima, Takahito; Ariyoshi, Keiko; Tanaka, Yasunori; Okumura, Hajime

Book ID: 124091867
Publisher: IEEE
Year: 2012
Weight: 811 KB
Category: Article
ISBN: 1457715961
DOI: 10.1109/ISPSD.2012.6229071

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