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[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Scaling rule for very shallow trench IGBT toward CMOS process compatibility

✍ Scribed by Tanaka, Masahiro; Omura, Ichiro

Book ID: 124090321
Publisher: IEEE
Year: 2012
Weight: 798 KB
Category: Article
ISBN: 1457715961
DOI: 10.1109/ISPSD.2012.6229052

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