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[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Switching controllability of high voltage GaN-HEMTs and the cascode connection

✍ Scribed by Saito, Wataru; Saito, Yasunobu; Fujimoto, Hidetoshi; Yoshioka, Akira; Ohno, Tetsuya; Naka, Toshiyuki; Sugiyama, Toru

Book ID: 120580527
Publisher: IEEE
Year: 2012
Weight: 816 KB
Category: Article
ISBN: 1457715961
DOI: 10.1109/ISPSD.2012.6229065

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