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[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Ultra compact and high reliable SiC MOSFET power module with 200°C operating capability

✍ Scribed by Horio, Masafumi; Iizuka, Yuji; Ikeda, Yoshinari; Mochizuki, Eiji; Takahashi, Yoshikazu

Book ID: 124087077
Publisher: IEEE
Year: 2012
Weight: 921 KB
Category: Article
ISBN: 1457715961
DOI: 10.1109/ISPSD.2012.6229028

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