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[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses

✍ Scribed by Masoero, L.; Molas, G.; Blaise, P.; Colonna, J. P.; Vianello, E.; Selmi, L.; Papon, A. M.; Lafond, D.; Martin, F.; Gely, M.; Licitra, C.; Barnes, J. P.; Ghibaudo, G.; De Salvo, B.

Book ID: 127041407
Publisher: IEEE
Year: 2011
Weight: 440 KB
Category: Article
ISBN: 1424484936
DOI: 10.1109/vtsa.2011.5872268

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