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[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - High temperature millisecond silicide anneal for contact resistivity −8 Ωcm2

✍ Scribed by Loh, W.-Y; Yang, Y. R.; Hung, P. Y.; Sassman, B.; Kenney, C.; Bersuker, G.; Majhi, P.; Kirsch, P. D.; Jammy, R.

Book ID: 126757662
Publisher: IEEE
Year: 2011
Weight: 558 KB
Category: Article
ISBN: 1424484936
DOI: 10.1109/VTSA.2011.5872239

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