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[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices

✍ Scribed by Yu, Shimeng; Wu, Yi; Chai, Yang; Provine, J.; Wong, H.-S. Philip

Book ID: 121339253
Publisher: IEEE
Year: 2011
Weight: 420 KB
Category: Article
ISBN: 1424484936
DOI: 10.1109/VTSA.2011.5872251

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