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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Normally-off InAlN/GaN HEMTs with n++ GaN cap layer: A simulation study

✍ Scribed by Vitanov, Stanislav; Kuzmik, Jan; Palankovski, Vassil

Book ID: 118167838
Publisher: IEEE
Year: 2011
Weight: 451 KB
Volume: 0
Category: Article
ISBN: 1457717557
DOI: 10.1109/isdrs.2011.6135161

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