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[IEEE 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Osaka, Japan (2011.05.19-2011.05.20)] 2011 International Meeting for Future of Electron Devices - Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

✍ Scribed by Wei, Guobin; Murakami, Hideki; Fujioka, Tomohiro; Ohta, Akio; Goto, Yuta; Higashi, Seiichiro; Miyazaki, Seiichi

Book ID: 126701905
Publisher: IEEE
Year: 2011
Weight: 234 KB
Category: Article
ISBN: 1612841457
DOI: 10.1109/IMFEDK.2011.5944869

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