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[IEEE 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Osaka, Japan (2011.05.19-2011.05.20)] 2011 International Meeting for Future of Electron Devices - Design consideration of 0.4V-operation SOTB MOSFET for super low power application

✍ Scribed by Makiyama, H.; Horita, K.; Iwamatsu, T.; Oda, H.; Sugii, N.; Inoue, Y.; Yamamoto, Y.

Book ID: 118183962
Publisher: IEEE
Year: 2011
Weight: 247 KB
Volume: 0
Category: Article
ISBN: 1612841457
DOI: 10.1109/imfedk.2011.5944835

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