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[IEEE 2011 3rd IEEE International Memory Workshop (IMW) - Monterey, CA, USA (2011.05.22-2011.05.25)] 2011 3rd IEEE International Memory Workshop (IMW) - Endurance Prediction of Scaled NAND Flash Memory Based on Spatial Mapping of Erase Tunneling Current

✍ Scribed by Fayrushin, Albert; Lee, ChangHyun; Park, Youngwoo; Choi, Jungdal; Choi, Jeonghyuk; Chung, Chilhee

No coin nor oath required. For personal study only.

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