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[IEEE 2010 International Symposium on Next-Generation Electronics (ISNE) - Kaohsiung, Taiwan (2010.11.18-2010.11.19)] 2010 International Symposium on Next Generation Electronics - The etching and annealing influences of front-contact ZnO:Ga on amorphous thin film silicon solar cells

✍ Scribed by Yang, Hung-Jen; Wu, Chien-Liang; Huang, Chian-Fu; Chen, Chun-Heng; Chen, Yi-Chan; Lee, Wen-Cheng

Book ID: 126618808
Publisher: IEEE
Year: 2010
Weight: 436 KB
Category: Article
ISBN: 1424466938
DOI: 10.1109/ISNE.2010.5669201

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