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[IEEE 2010 International Symposium on Next-Generation Electronics (ISNE) - Kaohsiung, Taiwan (2010.11.18-2010.11.19)] 2010 International Symposium on Next Generation Electronics - Characterization for novel non-traditional CMOS inverter composed of a junctionless NMOSFET and a gated N+-N−-P transistor

✍ Scribed by Lu, Kuan-Yu; Lin, Jyi-Tsong; Chen, Hsuan-Hsu; Eng, Yi-Chuen; Tai, Chih-Hsuan; Chen, Cheng-Hsin; Chang, Yu-Che; Fan, Yi-Hsuan

Book ID: 121271679
Publisher: IEEE
Year: 2010
Weight: 996 KB
Category: Article
ISBN: 1424466938
DOI: 10.1109/ISNE.2010.5669150

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