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[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Strain effects on hole current in silicon nanowire FETs

✍ Scribed by Minari, Hideki; Kitayama, Tatsuro; Yamamoto, Masahiro; Mori, Nobuya

Book ID: 120604954
Publisher: IEEE
Year: 2010
Weight: 385 KB
Category: Article
ISBN: 1424477018
DOI: 10.1109/SISPAD.2010.5604528

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