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[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Modeling of NQS effects in carbon nanotube transistors

✍ Scribed by Claus, Martin; Mothes, Sven; Schroter, Michael

Book ID: 120570431
Publisher: IEEE
Year: 2010
Weight: 129 KB
Category: Article
ISBN: 1424477018
DOI: 10.1109/SISPAD.2010.5604527

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