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[IEEE 2010 IEEE International Integrated Reliability Workshop (IIRW) - S. Lake Tahoe, CA, USA (2010.10.17-2010.10.21)] 2010 IEEE International Integrated Reliability Workshop Final Report - Investigation into the effect of a “through silicon via”-process on the MOS transistor reliability of a standard 0.13µm CMOS technology

✍ Scribed by Martin, Andreas; Borucki, Ludger; Reisinger, Hans; Schlunder, Christian

Book ID: 125455757
Publisher: IEEE
Year: 2010
Weight: 305 KB
Category: Article
ISBN: 1424485215
DOI: 10.1109/iirw.2010.5706485

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