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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Negatively charged deep level defects generated by Yttrium and Lanthanum incorporation into HfO2 for Vth adjustment, and the impact on TDDB, PBTI and 1/f noise

✍ Scribed by Sato, Motoyuki; Kamiyama, Satoshi; Sugita, Yoshihiro; Matsuki, Takeo; Morooka, Tetsu; Suzuki, Takayuki; Shiraishi, Kenji; Yamabe, Kikuo; Ohmori, Kenji; Yamada, Keisaku; Yugami, Jiro; Ikeda, Kazuto; Ohji, Yuzuru

Book ID: 126760214
Publisher: IEEE
Year: 2009
Weight: 280 KB
Category: Article
ISBN: 1424456398
DOI: 10.1109/IEDM.2009.5424407

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